Power diode with multi-layer compound passivation and dual-P typed diffusion are studied and manufactured. Combine multiple advantages, a power diode with reverse breakdown voltage higher than 2200V, static on-resistance 1.11Ω and leakage current of 8.3mA can be obtained on silicon with a drift layer thickness of 280um and a resistivity of 60Ωcm. Simulation shows multilayer passivation layer with polysilicon contact can effectively change the edge carrier distribution, thus reducing the transverse current generation and improving the voltage withstand. Inserting a light and deep aluminum doped layer into PIN diode can increase the reverse withstand voltage by more than 16% through expanding depletion layer. And the moat structure of the device can further reduce the edge peak electric field, thus reducing the risk of breakdown. This device can be used in switching power supply and inverter.