The Von Neumann architecture urgently needs to overcome the bottleneck of the storage wall issue, which can be effectively addressed by the emerging Magnetic Random Access Memory (MRAM) due to its high speed, non-volatility, low power consumption, high integration, durability, and compatibility with CMOS. This makes magnetic storage an optimal solution for overcoming the bottleneck of the Von Neumann architecture. However, pure magnetic storage devices for storage and computation are not yet available. Therefore, the optimization of novel MRAM structures has become a new choice for future computing in memory. This paper proposes a four-terminal magnetic tunnel junction (MTJ) device structure basic principle of Spin-Orbit Torque (SOT), which has multi-bit and capable of performing logical operations such as AND, OR, and XOR with ultra-high computational efficiency. The proposed device structure is verified to perform Boolean logic operations in one cycle by Cadence simulation, which providing a new method for in-memory computing in our solution.