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Investigation on the Sensing Properties of Organic Field Effect Transistors Using P3HT
Silpa S. Prasad, Divya G, Sindhu S, Shreekrishna Kumar K
149 - 153
10.3233/APC200134
Research Article
Advances in Parallel Computing
Volume 37: Intelligent Systems and Computer Technology
Abstract

The humidity sensing behavior and the properties of P3HT based thin film organic field effect transistor (OFET) has been reported. Layers with (Au)/P3HT/SiO2/(Au) are coated and OFET is fabricated. The XRD pattern of thin films are plotted which shows an orientation of (100) indicating its crystalline nature. The morphological studies report the presence of dreg like structures that can absorb water molecules from a humid environment which can be used in humidity sensing applications.

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