Super-resolution (SR) methodologies allow the construction of high resolution images from several noisy low-resolution images. This methodology can be applied to overcome the inherent resolution limitation and improve the performance in digital imaging of scanning transmission electron microscopes (STEM). Here we apply SR to column resolved images of a monocrystalline GaAs/InAs quantum dot covered by a GaAsSb capping layer. Series of 8 images with a dwell time of 1s were taken to apply SR. The improvement of the SR images has been evaluated in terms of SNR and spatial reliability by comparison of images captured with a dwell time of 8s. The results indicate that the SR technique emerges as a remarkable and powerful tool for the improvement of the quality of the STEM imaging.