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Noise studies of driven geometric phase gates with trapped ions
A. Lemmer, M.B. Plenio, A. Bermudez
229 - 244
10.3254/978-1-61499-526-5-229
Proceedings of the International School of Physics "Enrico Fermi"
Volume 189: Ion Traps for Tomorrow's Applications
Abstract

We present a study of the performance of the trapped-ion driven geometric phase gates (New J. Phys., 15 (2013) 083001) when realized using a stimulated Raman transition. We show that the gate can achieve errors below the fault-tolerance threshold in the presence of laser intensity fluctuations. We also find that, in order to reduce the errors due to photon scattering below the fault-tolerance threshold, very intense laser beams are required to allow for large detunings in the Raman configuration without compromising the gate speed.

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