The withstand voltage of input port and propagation delay time of gate driver determines the compatibility, the operating frequency, power density and efficiency of intelligent of data-driven systems. To improve the characteristics and scope of application of intelligent and data-driven systems, a high-speed gate driver IC with high-voltage logic input level and fast level shifting is presented. Utilizing a high-voltage logic input circuit with the drain of NLDMOS as the input port, the external high-voltage logic input signal is converted into an internal low-voltage logic control signal. The level-shifters, which incorporate transient pulse acceleration and steady-state level maintenance for rapid level rising and falling, are designed to reduce the propagation delay time of gate driver. An adaptive dead-time control method is employed to prevent shoot-through of internal power devices. The proposed gate driver is designed and simulated with 0.35μm high voltage BCD process. Simulation results demonstrate that the high level of the logic input stage can reach up to 12V, the rising time and falling time of proposed gate driver are 7.1ns and 3.1ns respectively when loaded with a 1nF capacitor, and the rising and falling propagation delay time are 14.6ns and 17.2ns respectively. The proposed gate driver is characterized by a high-voltage logic input level, high reliability, and fast response.