The terahertz frequency band has a higher frequency compared to microwave and millimeter waves, giving terahertz antennas the natural advantage of small size and posing higher challenges to antenna design and production. Therefore, terahertz antennas have higher integration, stronger control capabilities, and more intelligence. The silicon-based intelligent solid-state plasma antenna is designed based on a surface PiN (SPiN) diode, which replaces metal as the antenna unit and utilizes the high-concentration solid-state plasma region inside the device to achieve electromagnetic wave radiation, reception, and transmission. The size of the diode unit is less than 200 microns. By controlling the conduction and cutoff of diodes in different regions, antenna radiation and reconstruction can be achieved. When the antenna is not working, the plasma area disappears, and the antenna is in a stealth state. Silicon-based intelligent solid-state plasma antennas not only have dynamic reconstruction, adaptability, and stealth characteristics but also have advantages such as compatibility with integrated circuit technology and high applicable frequency, providing a new idea and method for the development and application of terahertz technology.