In this research paper, a design for circuit of an operational amplifier (OP-AMP) is formulated utilizing model characteristics of FinFET using high-k gain in the context of 22 nm technological advancements. To create an OP-AMP based on FinFET technology, the standard design equations for MOSFET-based OP-AMP design are tuned to FinFET based OPAMP. The OP-AMP architecture is well-suited for implementation as a subordinate circuit in the ADC design since it supports lower voltage, elevated velocity, and diminished power dissipation. The geometries of the transistors are organised to accomplish an OP-AMP that exhibits superior fulfilment and energy efficiency. Using cadence tool schematic is captured. Results show that the developed OPAMP exhibits a UGB of 100 GHz based on simulation experiments and a slew rate below 10V/µS. The inverter circuit amounts to power dissipation of 800nW, thereby rendering it suitable for a wide range of low-power analog and digital circuits.