In this paper, a novel snapback-free reverse-conducting lateral insulated-gate bipolar transistor with embedded MOS controlled diode is proposed and investigated by the numerical TCAD Simulation. The proposed reverse conducting LIGBT features an embedded MOS controlled diode which provides reverse conduction path when the gate voltage of MOS controlled diode is greater than those of threshold voltage. The collector and floating ohmic contact are shorted by the PN junction above the MOS controlled diode gate oxide layer, which provides a current path for carriers in the forward-conducting and turn off modes. Compared with the Separated Shorted-Anode LIGBT (SSA LIGBT), the snapback voltage (ΔV_SB) of the proposed LIGBT is not only completely eliminated, but also decreases collector size. The simulation shows that the turn-off loss of the proposed LIGBT, under the same forward voltage drop (V_on∼1.38 V), reduces 66.4% and 44.2% for the SSA LIGBT and conventional LIGBT (CON LIGBT), respectively. In addition, the short-circuit withstand and reverse recovery capabilities are obviously improved by the MOS controlled diode.