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Investigation on Gate Capacitances Fluctuation Due to Work-Function Variation in Metal-Gate FinFETs
Wei-Feng Lü, Mi Lin, Hai-peng Zhang
398 - 403
10.3233/978-1-61499-828-0-398
Frontiers in Artificial Intelligence and Applications
Volume 299: Fuzzy Systems and Data Mining III
Abstract

This paper considers gate capacitance fluctuation due to work-function variation (WFV) in metal-gate Fin-type field-effect-transistors (FinFETs). The study shows that there exist correlations between gate trans-capacitance variations. Also, an analytical statistical model is presented to capture total gate capacitance variation based on the correlations. The model well fits the Monte Carlo simulations data. Our study also indicates, the gate capacitance variation due to WFV is very sensitive to drain-source voltage.

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