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Based on the negative differential resistance (NDR) characteristic of resonant tunneling diode (RTD) and negative resistance equivalent model, a multiple-valued hysteretic characteristic unit is realized in this paper. The effects of device parameters of the equivalent model on the multiple-valued RTD hysteresis loop are analyzed. Simulation results show that the designed unit can complete the conversion between various resistance states under excitation of the periodic signal. This design broadens the application area of RTD and multiple-valued logic, and provides a theoretical basis for the future cross-research on multiple-valued negative differential resistance circuits and multiple-valued memristor circuits.
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