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A novel memristor with adjustable threshold voltage and resistance is introduced which is simulated by the R-HBT-NDR equivalent model according to the negative differential resistance (NDR) characteristic of Resonant Tunneling Diode (RTD). Experimental results show that the R-HBT-NDR-based memristor has a similar hysteresis loop to the TiO2 memristor, and can obtain adjustable thresholds and resistance by changing the equivalent model parameters. The R-HBT-NDR-based memristor is also applied to the multiple-valued logic operation units design. Compared to the conventional second type ternary CMOS logic units, the designed R-HBT-NDR memristor based multiple-valued NAND and NOR logic units not only have lower power consumption, but also have better output characteristic. This paper proposes a new idea for multiple-valued logic design of memristor circuits and cross-research of memristor and negative resistance device.
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